to-220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors TIP42/42a/42b/42c transistor (pnp) features z medium power linear sw itching applications z complement to tip41/41a/41b/41c maximum ratings (t a =25 unless otherwise noted) symbol parameter TIP42 TIP42a TIP42b TIP42c unit v cbo collector-base voltage -40 -60 -80 -100 v v ceo collector-emitter voltage -40 -60 -80 -100 v v ebo emitter-base voltage -5 v i c collector current -continuous -6 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature range -55to+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage TIP42 TIP42a TIP42b TIP42c v (br)cbo i c = -1ma, i e =0 -40 -60 -80 -100 v collector-emitter breakdown voltage TIP42 TIP42a TIP42b TIP42c v (br)ceo * i c = -30ma, i b =0 -40 -60 -80 -100 v emitter-base breakdown voltage v (br)ebo i e = -1ma, i c =0 -5 v collector cut-off current TIP42 TIP42a TIP42b TIP42c i cbo v cb =-40v, i e =0 v cb =-60v, i e =0 v cb =-80v, i e =0 v cb =-100v, i e =0 -0.4 ma collector cut-off current TIP42/42a TIP42b/42c i ceo v ce = -30v, i b = 0 v ce = -60v, i b = 0 -0.7 ma emitter cut-off current i ebo v eb =-5v, i c =0 -1 ma h fe(1) v ce =-4v, i c =-0.3a 30 dc current gain h fe(2) v ce =-4 v, i c = -3a 15 75 collector-emitter saturation voltage v ce(sat) i c =-6a, i b =-0.6a -1.5 v base-emitter voltage v be v ce =-4v, i c =-6a -2 v transition frequency f t v ce =-10v,i c =-0.5 3 mh z * pulse test 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
-100 0 4 8 12 16 20 -0.1 -1 -10 -100 -1000 -0 -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 0 1 2 3 -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 -1000 10 100 1000 -0.1 -1 -10 10 100 1000 10000 -0 -200 -400 -600 -800 -1000 -1200 -0.1 -1 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -6 -0 -50 -100 -150 -200 -250 -300 -350 -400 -600 -20 -6000 i c f t ?? common emitter v ce =-10v t a =25 collector current i c (ma) transition frequency f t (mhz) -6000 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) -3000 -6000 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) -0.5 TIP42c i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = -4v -30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =-4v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) -4ma -3.6ma -3.2ma -2.8ma -2.4ma -2ma -0.8ma -1.2ma -1.6ma i b =-0.4ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
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